Tetrakis(dimethylamino)titanium(IV)

≥97%

Reagent Code: #68474
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CAS Number 3275-24-9

science Other reagents with same CAS 3275-24-9

blur_circular Chemical Specifications

scatter_plot Molecular Information
Weight 224.18 g/mol
Formula C₈H₂₄N₄Ti
badge Registry Numbers
MDL Number MFCD00014861
inventory_2 Storage & Handling
Storage Room temperature, dry, sealed, stored in nitrogen

description Product Description

Used as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes for depositing ultra-thin titanium-containing films, such as titanium nitride (TiN) and titanium dioxide (TiO2). These films are essential in semiconductor manufacturing for diffusion barriers, high-k dielectrics, and gate electrodes in advanced microelectronics. It is also utilized in research and development for synthesizing novel titanium-based nanomaterials with applications in catalysis, energy storage, and nanotechnology.

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Test Parameter Specification
Appearance Light yellow to brown clear liquid
Purity 96.5-100
Infrared Spectrum Conforms to Structure

shopping_cart Available Sizes & Pricing

Size Availability Unit Price Quantity
inventory 1g
10-20 days ฿4,600.00
inventory 5g
10-20 days ฿16,080.00
inventory 200mg
10-20 days ฿1,360.00

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Tetrakis(dimethylamino)titanium(IV)
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Used as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes for depositing ultra-thin titanium-containing films, such as titanium nitride (TiN) and titanium dioxide (TiO2). These films are essential in semiconductor manufacturing for diffusion barriers, high-k dielectrics, and gate electrodes in advanced microelectronics. It is also utilized in research and development for synthesizing novel titanium-based nanomaterials with applications in catalysis, ene

Used as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes for depositing ultra-thin titanium-containing films, such as titanium nitride (TiN) and titanium dioxide (TiO2). These films are essential in semiconductor manufacturing for diffusion barriers, high-k dielectrics, and gate electrodes in advanced microelectronics. It is also utilized in research and development for synthesizing novel titanium-based nanomaterials with applications in catalysis, energy storage, and nanotechnology.

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