Used as a precursor in the deposition of hafnium oxide thin films, which are critical in the manufacturing of advanced semiconductor devices. It plays a key role in atomic layer deposition (ALD) processes, enabling precise control over film thickness and uniformity. This chemical is particularly valuable in the production of high-k dielectric materials for transistors, enhancing their performance and efficiency in microelectronics. Additionally, it is employed in the development of protective coatings and specialized optical films, contributing to advancements in nanotechnology and materials science.