Used in semiconductor manufacturing as a high-k dielectric material in advanced transistor gate stacks, enabling smaller, more efficient microchips. Applied via atomic layer deposition (ALD) or chemical vapor deposition (CVD) to improve insulation and reduce leakage current in integrated circuits. Also utilized in optical coatings for its high refractive index and durability under extreme conditions. Investigated for use in nuclear control rods due to hafnium’s high neutron absorption capacity.