Used primarily in the semiconductor industry as a precursor for chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to form hafnium-containing dielectric films. These high-k dielectric materials are critical in modern microelectronics, especially in the gate stacks of advanced transistors, enabling improved performance and reduced leakage current in integrated circuits. Also employed in the production of specialty optical coatings due to its high refractive index and resistance to radiation damage. Additionally, finds use in nuclear reactor applications as a neutron absorber when incorporated into control rods or shielding materials.