Used as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing germanium-containing thin films. These films are critical in semiconductor manufacturing, especially in the production of high-speed electronic devices and optoelectronic components. Its high volatility and thermal stability make it suitable for low-temperature deposition processes, enabling precise control over film composition and thickness. Also explored in the synthesis of germanium-based nanomaterials and as a reagent in organometallic chemistry for the formation of germanium-nitrogen bonds.