Bis(trimethylsilyl)telluride

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Reagent Code: #141610
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CAS Number 4551-16-0

science Other reagents with same CAS 4551-16-0

blur_circular Chemical Specifications

scatter_plot Molecular Information
Weight 273.978 g/mol
Formula C₆H₁₈Si₂Te
thermostat Physical Properties
Melting Point 13.5 °C
Boiling Point 74 °C at 11 mmHg
inventory_2 Storage & Handling
Storage 2-8°C

description Product Description

Used primarily as a precursor in organometallic chemistry and materials science, especially in the synthesis of tellurium-containing compounds. It serves as a source of tellurium in the preparation of metal tellurides and semiconductor materials, which are important in optoelectronic devices and infrared detectors. Its volatility and reactivity make it suitable for vapor deposition techniques, such as chemical vapor deposition (CVD), where controlled thin films of tellurium-based materials are required. Also employed in research settings to introduce tellurium into complex organic and inorganic frameworks, enabling the study of novel chalcogenide chemistry.

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inventory 1g
10-20 days ฿157,700.00

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Bis(trimethylsilyl)telluride
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Used primarily as a precursor in organometallic chemistry and materials science, especially in the synthesis of tellurium-containing compounds. It serves as a source of tellurium in the preparation of metal tellurides and semiconductor materials, which are important in optoelectronic devices and infrared detectors. Its volatility and reactivity make it suitable for vapor deposition techniques, such as chemical vapor deposition (CVD), where controlled thin films of tellurium-based materials are required.

Used primarily as a precursor in organometallic chemistry and materials science, especially in the synthesis of tellurium-containing compounds. It serves as a source of tellurium in the preparation of metal tellurides and semiconductor materials, which are important in optoelectronic devices and infrared detectors. Its volatility and reactivity make it suitable for vapor deposition techniques, such as chemical vapor deposition (CVD), where controlled thin films of tellurium-based materials are required. Also employed in research settings to introduce tellurium into complex organic and inorganic frameworks, enabling the study of novel chalcogenide chemistry.

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