Used as a precursor in chemical vapor deposition (CVD) processes to deposit silicon-based thin films, especially in semiconductor manufacturing. Its high reactivity and volatility allow for low-temperature film growth, making it suitable for temperature-sensitive substrates. Commonly employed in the formation of silicon nitride and silicon carbide layers, which act as dielectrics or protective coatings in microelectronics. Also utilized in surface modification and functionalization of materials due to the presence of amine groups, enabling improved adhesion or compatibility in composite systems.