Used as a silicon-based precursor in semiconductor manufacturing, particularly in chemical vapor deposition (CVD) processes. It serves in the formation of silicon nitride and silicon carbonitride thin films, which act as dielectric layers or diffusion barriers in advanced microelectronic devices. Its high volatility and reactivity at elevated temperatures make it suitable for low-temperature deposition, improving process efficiency and enabling integration into sensitive device architectures. Additionally, it finds use in surface modification of nanomaterials due to its reactive dimethylamino groups, which facilitate functionalization of nanoparticles and porous materials for catalytic or sensing applications.