Indium arsenide is widely used in the field of optoelectronics due to its high electron mobility and narrow bandgap. It is a key material in the production of infrared detectors, which are essential for night vision devices, thermal imaging, and remote sensing applications. Additionally, it is utilized in high-frequency and high-speed electronic devices, such as transistors and integrated circuits, because of its superior performance in these areas. In the telecommunications industry, indium arsenide is employed in the fabrication of laser diodes and photodetectors, enabling efficient data transmission over optical fibers. Its properties also make it suitable for research and development in quantum computing, where it is used to create qubits and other components for advanced computational systems.