Used as a precursor in chemical vapor deposition (CVD) processes to produce copper thin films for semiconductor and microelectronic devices. Its high volatility and thermal stability allow for precise deposition of high-purity copper layers, which are essential for interconnects in integrated circuits. Also employed in atomic layer deposition (ALD) due to its favorable ligand structure that facilitates clean decomposition without leaving significant carbon residue. Suitable for advanced node technologies where uniform, conformal copper coatings are required on complex nanostructures.