Widely used as a precursor in chemical vapor deposition (CVD) processes to deposit thin films of ruthenium and ruthenium-based materials. These films serve as low-resistance conductive layers in advanced semiconductor devices, particularly in dynamic random-access memory (DRAM) and other integrated circuits. Its high volatility and thermal stability make it ideal for producing uniform, conformal coatings at relatively low deposition temperatures. Also employed in catalytic applications, especially in reactions involving hydrogenation and C–H activation, due to the reactivity of the ruthenium center. Additionally, it serves as a starting material for synthesizing other organoruthenium complexes used in academic and industrial research.