Used as a photoacid generator (PAG) in photoresist formulations for semiconductor lithography. Upon exposure to deep ultraviolet (DUV) or extreme ultraviolet (EUV) light, it releases strong sulfonic acids that catalyze chemical transformations in the resist, enabling precise pattern development during microfabrication. Its thermal stability and efficient acid generation make it ideal for high-resolution patterning in advanced chip manufacturing. Also employed in some cationic polymerization processes and specialty coatings requiring controlled acid-catalyzed curing.