TriphenylsulfoniumHexafluorophosphate

≥98%(HPLC)

Reagent Code: #244273
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CAS Number 57835-99-1

science Other reagents with same CAS 57835-99-1

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Weight 408.34 g/mol
Formula C₁₈H₁₅F₆PS
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MDL Number MFCD00083120
inventory_2 Storage & Handling
Storage Room temperature

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Used primarily as a photoacid generator (PAG) in photolithography, especially in deep ultraviolet (DUV) and extreme ultraviolet (EUV) resist systems. Upon exposure to radiation, it releases strong acids like HF, which catalyze chemical transformations in photoresists, enabling precise pattern development in semiconductor manufacturing. It is favored in positive and negative tone resists due to its thermal stability and efficient acid generation. Also employed in cationic polymerization reactions and specialty coatings where controlled initiation is required. Its compatibility with high-resolution patterning makes it critical in microelectronics and integrated circuit fabrication.

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inventory 5g
10-20 days ฿2,760.00

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TriphenylsulfoniumHexafluorophosphate
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Used primarily as a photoacid generator (PAG) in photolithography, especially in deep ultraviolet (DUV) and extreme ultraviolet (EUV) resist systems. Upon exposure to radiation, it releases strong acids like HF, which catalyze chemical transformations in photoresists, enabling precise pattern development in semiconductor manufacturing. It is favored in positive and negative tone resists due to its thermal stability and efficient acid generation. Also employed in cationic polymerization reactions and spec

Used primarily as a photoacid generator (PAG) in photolithography, especially in deep ultraviolet (DUV) and extreme ultraviolet (EUV) resist systems. Upon exposure to radiation, it releases strong acids like HF, which catalyze chemical transformations in photoresists, enabling precise pattern development in semiconductor manufacturing. It is favored in positive and negative tone resists due to its thermal stability and efficient acid generation. Also employed in cationic polymerization reactions and specialty coatings where controlled initiation is required. Its compatibility with high-resolution patterning makes it critical in microelectronics and integrated circuit fabrication.

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