Used as a photoacid generator in advanced photoresist formulations for semiconductor manufacturing. Upon exposure to deep UV or EUV light, it releases strong acid (HF or related species) that catalyzes chemical changes in the resist polymer, enabling high-resolution patterning. Also applied in cationic polymerization reactions where light-triggered acid release initiates curing of epoxy or vinyl ether monomers. Its thermal stability and efficient photodecomposition make it suitable for precision coatings, microelectronics, and photolithography processes.