Used primarily as a photoacid generator (PAG) in advanced photoresist formulations for semiconductor manufacturing. Upon exposure to deep ultraviolet (DUV) or extreme ultraviolet (EUV) light, it releases strong acids that catalyze chemical transformations in the resist, enabling precise pattern development during photolithography. Its thermal stability and efficient acid generation make it suitable for high-resolution patterning in microelectronics fabrication. Also employed in cationic polymerization processes where controlled initiation is required under light exposure.