This compound is primarily utilized in advanced photolithography processes within the semiconductor industry. It serves as a photoacid generator (PAG) in chemically amplified photoresists, which are critical for patterning microelectronic components. Upon exposure to ultraviolet (UV) light, it releases strong acids that catalyze the deprotection or cross-linking of the polymer matrix, enabling precise pattern transfer onto substrates. Its high thermal stability and efficient acid generation make it suitable for high-resolution fabrication of integrated circuits and other nanoscale devices. Additionally, it is valued for its compatibility with deep UV and extreme UV lithography technologies, contributing to the production of smaller, faster, and more efficient electronic components.