Used as a photoacid generator (PAG) in advanced photoresist formulations for semiconductor manufacturing. Upon exposure to deep ultraviolet (DUV) or extreme ultraviolet (EUV) light, it releases strong acid that catalyzes chemical transformations in the resist, enabling precise pattern development during lithography. Its thermal stability and efficient acid generation make it suitable for high-resolution patterning in microelectronics fabrication. Also employed in cationic polymerization reactions where light-triggered acid release initiates curing of epoxy or vinyl ether monomers, useful in coatings, inks, and specialty adhesives.