Used in semiconductor devices due to its high electron mobility and wide indirect bandgap, making it suitable for high-frequency and optoelectronic applications such as infrared light-emitting diodes (LEDs), laser diodes, and photodetectors. It is also employed in heterojunction bipolar transistors (HBTs) and integrated circuits where high-speed performance is critical. Its compatibility with certain III-V semiconductor systems allows integration into advanced electronic and photonic components, particularly in telecommunications, aerospace technologies, and multijunction solar cells to enhance energy conversion efficiency.