Used primarily as a precursor in chemical vapor deposition (CVD) processes for producing titanium-containing thin films. These films are applied in semiconductor manufacturing to create diffusion barriers, adhesion layers, and conductive coatings in advanced microelectronic devices. The compound’s volatility and thermal decomposition properties make it suitable for depositing titanium nitride or titanium carbonitride layers at relatively low temperatures, which is beneficial for integrating into sensitive device structures. It is also explored in atomic layer deposition (ALD) for precise, conformal coatings on high-aspect-ratio features in modern logic and memory chips.