Used as a precursor in sol-gel processes for depositing tantalum-containing oxide films, particularly in the fabrication of high-k dielectric materials for semiconductor devices. Its mixed ligand structure enhances volatility and reactivity, making it suitable for chemical vapor deposition (CVD) and atomic layer deposition (ALD) of tantalum oxide layers. These films are critical in capacitors, gate insulators, and memory devices due to their high dielectric constants and thermal stability. Also employed in the synthesis of advanced ceramic coatings and nanomaterials where controlled hydrolysis and condensation are required. The compound’s tailored reactivity allows for precise film composition and thickness at relatively low temperatures.