Used as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing erbium-containing thin films. These films are critical in optoelectronic devices, particularly for enhancing photoluminescence in silicon-based materials used in integrated optics and telecommunications. The compound’s high volatility and thermal stability make it suitable for precise doping of erbium in semiconductor layers, enabling efficient light emission at 1.54 μm wavelength, which is ideal for fiber-optic communication systems. Also employed in research for developing luminescent materials and solid-state lasers.