Used as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing erbium-containing thin films, particularly in optoelectronic devices. Its high volatility and thermal stability make it suitable for introducing erbium into semiconductor materials, enabling applications in photoluminescent coatings, fiber optics, and integrated optical amplifiers. Also employed in research for doping crystalline and amorphous matrices to achieve efficient infrared emission, useful in telecommunications and solid-state lasers.