Used primarily in the semiconductor industry as a precursor for depositing arsenic-containing thin films through metalorganic chemical vapor deposition (MOCVD). It plays a key role in the fabrication of compound semiconductors like gallium arsenide (GaAs) and indium arsenide (InAs), which are essential in high-speed electronics, optoelectronic devices, and infrared detectors. Due to its high reactivity and toxicity, handling requires strict safety controls, but its volatility and decomposition properties make it effective for precise arsenic incorporation in crystal growth processes.