Used as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes for the formation of zirconium-containing thin films. These films serve as high-k dielectrics in semiconductor devices, offering improved gate insulation in transistors. The compound’s volatility and thermal stability make it suitable for low-temperature deposition, enabling integration into advanced microelectronic fabrication. It is also explored in catalysis and materials science for synthesizing zirconium-based nanomaterials and metal-organic frameworks.