Used primarily as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing platinum-containing thin films. These films serve as conductive layers in advanced semiconductor devices, particularly in dynamic random-access memory (DRAM) and ferroelectric random-access memory (FeRAM) structures. The compound’s thermal stability and volatility make it suitable for high-precision, low-defect platinum coatings on complex microelectronic components. It is also employed in research settings for synthesizing platinum-based nanomaterials and catalysts.