Used primarily as a precursor in metal-organic chemical vapor deposition (MOCVD) for the growth of indium-containing semiconductor materials. It plays a critical role in the fabrication of compound semiconductors such as indium phosphide (InP), indium arsenide (InAs), and indium nitride (InN), which are essential in optoelectronic devices. Common applications include high-speed electronics, laser diodes, photodetectors, and solar cells. Its high reactivity and volatility make it suitable for precise, controlled deposition of thin films at relatively low temperatures.