Used primarily as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing indium-containing thin films, especially in the production of compound semiconductors like indium gallium arsenide (InGaAs) and indium phosphide (InP). These materials are critical in high-speed electronics, photodetectors, laser diodes, and optoelectronic devices. The compound’s volatility and thermal stability make it suitable for precise, controlled delivery of indium in vapor phase processes. It is also employed in atomic layer deposition (ALD) for advanced microelectronics and nanoscale device fabrication. Its high purity and clean decomposition characteristics help achieve uniform, high-quality films essential in semiconductor manufacturing.