Used in semiconductor manufacturing, particularly in the production of gallium-based compounds like gallium arsenide (GaAs) and gallium nitride (GaN). These materials are essential in high-frequency electronics, LED lighting, solar cells, and optoelectronic devices. The solution serves as a precursor for depositing thin films via processes such as metal-organic chemical vapor deposition (MOCVD). It enables precise control over layer composition and thickness, critical for performance in advanced electronic and photonic applications. Also utilized in research and development for next-generation power electronics and wireless communication technologies.