Used as a precursor in the synthesis of gallium arsenide (GaAs) and other III-V semiconductor materials essential in high-speed electronics, optoelectronics, and photovoltaic devices. Commonly employed in metalorganic vapor phase epitaxy (MOVPE) processes to deposit thin films for LEDs, laser diodes, and solar cells. Also utilized in research settings for doping and nanostructure fabrication due to its reactivity and ability to introduce arsenic into crystalline lattices. Requires careful handling because of high toxicity and pyrophoric nature.