hafnium tetrachloride
99.9%, particle, zirconium ≤0.15%
science Other reagents with same CAS 13499-05-3
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description Product Description
Used in the production of hafnium metal and hafnium-based compounds for nuclear reactor control rods due to its high neutron absorption capacity. Serves as a precursor in chemical vapor deposition (CVD) processes to create hafnium-containing thin films, especially hafnium dioxide, which is used in semiconductor manufacturing as a high-k dielectric material. Also employed in catalytic applications and the synthesis of advanced ceramics for high-temperature environments.
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