Used primarily as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing hafnium-containing thin films, especially hafnium oxide (HfO₂). These films serve as high-k dielectrics in advanced semiconductor devices, including transistors and dynamic random-access memory (DRAM), enabling improved performance and reduced leakage current. The compound’s volatility and thermal stability make it suitable for precise, controlled deposition at relatively low temperatures. It is also explored in atomic layer deposition (ALD) processes for nanoscale electronic applications.