This chemical system involving the mixing of two anions with fluorine and chlorine is primarily used in advanced etching processes within the semiconductor industry. The combination enables highly selective and controlled removal of materials such as silicon dioxide and silicon nitride during microfabrication. Due to the reactive nature of fluorine and chlorine species, the mixture facilitates precise pattern transfer in photolithography, especially in deep reactive ion etching (DRIE). It is also employed in plasma-enhanced chemical vapor deposition (PECVD) chamber cleaning, where the generated radicals effectively remove residue buildup without damaging sensitive chamber components. The tunable reactivity between the anions allows optimization of etch rates and anisotropy, making it suitable for manufacturing high-aspect-ratio features in MEMS and nanoscale devices. Additionally, this mixture has applications in the synthesis of specialty fluorochloro compounds used in refrigerants and electrical insulation gases, where balanced reactivity helps achieve desired molecular structures with improved environmental and thermal properties.