Used extensively in semiconductor manufacturing and microfabrication processes, this chemical is primarily employed to etch silicon dioxide (SiO₂) layers selectively over silicon. It enables precise patterning of oxide films during the production of integrated circuits, MEMS devices, and display technologies. The buffering action allows for consistent etch rates and reduces the risk of undercutting, making it ideal for fine feature definition. Commonly applied in photolithography steps, it removes exposed oxide regions after masking, ensuring high dimensional accuracy. Also used in cleaning and surface preparation of wafers prior to deposition or bonding steps. Its controlled etching capability supports high yield and reliability in device fabrication.