Used primarily in sol-gel processes for the preparation of hafnium-containing oxide films and coatings. These films exhibit high refractive index and excellent thermal stability, making them suitable for optical coatings, anti-reflective layers, and dielectric materials in semiconductor devices. Also employed as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) to fabricate high-k gate dielectrics in advanced transistors. Its reactivity allows for controlled hydrolysis and condensation, enabling the formation of nanostructured hafnia materials used in catalysis and sensors. Additionally, it finds use in the synthesis of hafnium-based nanomaterials and hybrid organic-inorganic composites for specialized optical and electronic applications.