Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)lead(II)
97%
science Other reagents with same CAS 21319-43-7
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description Product Description
Used as a precursor in the synthesis of lead-containing thin films and nanomaterials through chemical vapor deposition (CVD) and atomic layer deposition (ALD). It enables controlled deposition of lead oxide layers, which are essential in fabricating ferroelectric and piezoelectric materials for sensors, actuators, and memory devices. Its high volatility and thermal stability make it suitable for vapor-phase processing. Also employed in research for developing lead-based perovskite structures with potential applications in optoelectronics and photovoltaics.
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