Tantalum(V) chloride

99.99% trace metals basis

Reagent Code: #240073
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CAS Number 7721-01-9

science Other reagents with same CAS 7721-01-9

blur_circular Chemical Specifications

scatter_plot Molecular Information
Weight 358.21 g/mol
Formula TaCl₅
badge Registry Numbers
EC Number 231-755-6
MDL Number MFCD00011253
thermostat Physical Properties
Melting Point 221 °C
Boiling Point 242 °C
inventory_2 Storage & Handling
Density 3.68 g/mL at 25 °C(lit.)
Storage Room temperature, seal, dry, inert gas storage

description Product Description

Used primarily in the semiconductor industry as a precursor for chemical vapor deposition (CVD) of tantalum-containing thin films, such as Ta and TaN. These films serve as diffusion barriers and conductive layers in advanced microelectronic devices, especially in integrated circuits. Also employed in the synthesis of other tantalum-based compounds. Acts as a Lewis acid catalyst in organic synthesis, particularly for functionalizing aromatic compounds. Its high reactivity makes it suitable for research applications involving metal-organic frameworks and specialty ceramics. Requires careful handling due to moisture sensitivity and corrosive byproducts.

shopping_cart Available Sizes & Pricing

Size Availability Unit Price Quantity
inventory 1g
10-20 days ฿800.00
inventory 5g
10-20 days ฿3,260.00
inventory 25g
10-20 days ฿9,850.00
inventory 100g
10-20 days ฿33,560.00
inventory 500g
10-20 days ฿134,470.00

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Tantalum(V) chloride
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Used primarily in the semiconductor industry as a precursor for chemical vapor deposition (CVD) of tantalum-containing thin films, such as Ta and TaN. These films serve as diffusion barriers and conductive layers in advanced microelectronic devices, especially in integrated circuits. Also employed in the synthesis of other tantalum-based compounds. Acts as a Lewis acid catalyst in organic synthesis, particularly for functionalizing aromatic compounds. Its high reactivity makes it suitable for research ap

Used primarily in the semiconductor industry as a precursor for chemical vapor deposition (CVD) of tantalum-containing thin films, such as Ta and TaN. These films serve as diffusion barriers and conductive layers in advanced microelectronic devices, especially in integrated circuits. Also employed in the synthesis of other tantalum-based compounds. Acts as a Lewis acid catalyst in organic synthesis, particularly for functionalizing aromatic compounds. Its high reactivity makes it suitable for research applications involving metal-organic frameworks and specialty ceramics. Requires careful handling due to moisture sensitivity and corrosive byproducts.

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