Aluminum nitride
99.9% metals basis,0.5μm
Reagent
Code: #135514
CAS Number
24304-00-5
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Molecular Information
Weight
40.99 g/mol
Formula
AlN
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Registry Numbers
EC Number
246-140-8
MDL Number
MFCD00003429
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Physical Properties
Melting Point
>2200 °C(lit.)
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Storage & Handling
Density
3.26 g/mL at 25 °C(lit.)
Storage
Room temperature
description Product Description
Aluminum nitride is widely used in electronic and semiconductor applications due to its excellent thermal conductivity and electrical insulation properties. It serves as a key material in heat sinks and substrates for high-power electronic devices, helping to dissipate heat efficiently while maintaining electrical isolation.
It is commonly employed in the production of integrated circuits, laser diodes, and high-frequency electronic components where thermal management is critical. Its compatibility with semiconductor processing makes it suitable for use in epitaxial growth of gallium nitride layers in optoelectronic devices.
Aluminum nitride is also used in harsh environment sensors and as a ceramic component in aerospace and defense applications due to its stability at high temperatures and resistance to thermal shock. Additionally, it finds use in specialized optical components and as a crucible material for handling molten metals and semiconductors.
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